“Silicon Carbide can carry a big gain, pretty much a 5% to 10% enhancement in selection,�?Based on Stephan Zizala, The top of Infineon’s automotive high-power methods group. Graphene growth by thermal decomposition of silicon carbide (SiC) is a method that creates wafer-scale, single-orientation graphene on an insulating substrate. It is https://x.com/Anumhsite/status/1809237850996736378